Rohm Semiconductor - RP1L080SNTR

KEY Part #: K6404505

[1988PC Stock]


    Nimewo Pati:
    RP1L080SNTR
    Manifakti:
    Rohm Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 60V 8A MPT6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Rohm Semiconductor RP1L080SNTR electronic components. RP1L080SNTR can be shipped within 24 hours after order. If you have any demands for RP1L080SNTR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RP1L080SNTR Atribi pwodwi yo

    Nimewo Pati : RP1L080SNTR
    Manifakti : Rohm Semiconductor
    Deskripsyon : MOSFET N-CH 60V 8A MPT6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 24 mOhm @ 8A, 10V
    Vgs (th) (Max) @ Id : 3V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1700pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : MPT6
    Pake / Ka : 6-SMD, Flat Leads

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