Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MOSFET - SIC
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
65A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 32.5A, 20V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
125nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 [B]