Nimewo Pati :
ALD110900APAL
Manifakti :
Advanced Linear Devices Inc.
Deskripsyon :
MOSFET 2N-CH 10.6V 8DIP
Seri :
EPAD®, Zero Threshold™
FET Kalite :
2 N-Channel (Dual) Matched Pair
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
500 Ohm @ 4V
Vgs (th) (Max) @ Id :
10mV @ 1µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
2.5pF @ 5V
Operating Tanperati :
0°C ~ 70°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP