Diodes Incorporated - DMG7401SFGQ-13

KEY Part #: K6394919

DMG7401SFGQ-13 Pricing (USD) [317107PC Stock]

  • 1 pcs$0.11664
  • 3,000 pcs$0.09462

Nimewo Pati:
DMG7401SFGQ-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CH 30V 9.8A POWERDI3333.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG7401SFGQ-13 Atribi pwodwi yo

Nimewo Pati : DMG7401SFGQ-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CH 30V 9.8A POWERDI3333
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 20V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 12A, 20V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 2987pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 940mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerWDFN