Diodes Incorporated - DMN3025LFG-7

KEY Part #: K6395018

DMN3025LFG-7 Pricing (USD) [490925PC Stock]

  • 1 pcs$0.07534
  • 2,000 pcs$0.06743

Nimewo Pati:
DMN3025LFG-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N CH 30V 7.5A POWERDI.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3025LFG-7 electronic components. DMN3025LFG-7 can be shipped within 24 hours after order. If you have any demands for DMN3025LFG-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3025LFG-7 Atribi pwodwi yo

Nimewo Pati : DMN3025LFG-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N CH 30V 7.5A POWERDI
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11.6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 605pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerWDFN