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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQE10N20LCTU

ON Semiconductor - FQE10N20LCTU

KEY Part #: K6411017

[13935PC Stock]

    Nimewo Pati:
    FQE10N20LCTU
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 200V 4A TO-126.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs and Tiristors - TRIACs ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQE10N20LCTU electronic components. FQE10N20LCTU can be shipped within 24 hours after order. If you have any demands for FQE10N20LCTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQE10N20LCTU Atribi pwodwi yo

    Nimewo Pati : FQE10N20LCTU
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 200V 4A TO-126
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
    RD sou (Max) @ Id, Vgs : 360 mOhm @ 2A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 490pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 12.8W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-126-3
    Pake / Ka : TO-225AA, TO-126-3

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