Vishay Siliconix - SI7129DN-T1-GE3

KEY Part #: K6411759

SI7129DN-T1-GE3 Pricing (USD) [200087PC Stock]

  • 1 pcs$0.18486
  • 3,000 pcs$0.17358

Nimewo Pati:
SI7129DN-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 30V 35A 1212-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7129DN-T1-GE3 electronic components. SI7129DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7129DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7129DN-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7129DN-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 30V 35A 1212-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 11.4 mOhm @ 14.4A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 71nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3345pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 52.1W (Tc)
Operating Tanperati : -50°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 1212-8
Pake / Ka : PowerPAK® 1212-8

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