IRFHM8228TRPBF Pricing (USD) [247954PC Stock]
- 1 pcs$0.14917
- 4,000 pcs$0.12793
- Nimewo Pati:
- IRFHM8228TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 25V 19A 8PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - JFETs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM8228TRPBF electronic components. IRFHM8228TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8228TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8228TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFHM8228TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 25V 19A 8PQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1667pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 34W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (3.3x3.3), Power33
Pake / Ka :
8-PowerTDFN
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