Diodes Incorporated - DMN2023UCB4-7

KEY Part #: K6521974

DMN2023UCB4-7 Pricing (USD) [333981PC Stock]

  • 1 pcs$0.11075

Nimewo Pati:
DMN2023UCB4-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH X1-WLB1818-4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2023UCB4-7 electronic components. DMN2023UCB4-7 can be shipped within 24 hours after order. If you have any demands for DMN2023UCB4-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2023UCB4-7 Atribi pwodwi yo

Nimewo Pati : DMN2023UCB4-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH X1-WLB1818-4
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Common Drain
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 24V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 1.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 37nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 3333pF @ 10V
Pouvwa - Max : 1.45W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 4-XFBGA, WLBGA
Pake Aparèy Founisè : X1-WLB1818-4

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