Infineon Technologies - IRF1405STRRPBF

KEY Part #: K6418617

IRF1405STRRPBF Pricing (USD) [70680PC Stock]

  • 1 pcs$0.55320
  • 800 pcs$0.53104

Nimewo Pati:
IRF1405STRRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 55V 131A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF1405STRRPBF Atribi pwodwi yo

Nimewo Pati : IRF1405STRRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 55V 131A D2PAK
Seri : HEXFET®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 131A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 5.3 mOhm @ 101A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5480pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 200W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB