[1130PC Stock]
- Nimewo Pati:
- IXUC200N055
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 55V 200A ISOPLUS-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXUC200N055 electronic components. IXUC200N055 can be shipped within 24 hours after order. If you have any demands for IXUC200N055, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXUC200N055 Atribi pwodwi yo
Nimewo Pati :
IXUC200N055
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 55V 200A ISOPLUS-220
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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