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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - IGBTs - Single
  5. GPA030A135MN-FDR

Global Power Technologies Group - GPA030A135MN-FDR

KEY Part #: K6424849

GPA030A135MN-FDR Pricing (USD) [39064PC Stock]

  • 1 pcs$1.00594
  • 2,500 pcs$1.00093
Nimewo Pati:
GPA030A135MN-FDR
Manifakti:
Global Power Technologies Group
Detaye deskripsyon:
IGBT 1350V 60A 329W TO3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Global Power Technologies Group GPA030A135MN-FDR electronic components. GPA030A135MN-FDR can be shipped within 24 hours after order. If you have any demands for GPA030A135MN-FDR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPA030A135MN-FDR Atribi pwodwi yo

Nimewo Pati : GPA030A135MN-FDR
Manifakti : Global Power Technologies Group
Deskripsyon : IGBT 1350V 60A 329W TO3PN
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1350V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 90A
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 30A
Pouvwa - Max : 329W
Oblije chanje enèji : 4.4mJ (on), 1.18mJ (off)
Kalite Antre : Standard
Gate chaje : 300nC
Td (on / off) @ 25 ° C : 30ns/145ns
Kondisyon egzamen an : 600V, 30A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 450ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3
Pake Aparèy Founisè : TO-3PN

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