ON Semiconductor - FQI5N50CTU

KEY Part #: K6410676

[14053PC Stock]


    Nimewo Pati:
    FQI5N50CTU
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 500V 5A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQI5N50CTU electronic components. FQI5N50CTU can be shipped within 24 hours after order. If you have any demands for FQI5N50CTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQI5N50CTU Atribi pwodwi yo

    Nimewo Pati : FQI5N50CTU
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 500V 5A I2PAK
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 2.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 625pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 73W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK (TO-262)
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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