TPH3205WSB Pricing (USD) [4174PC Stock]
- 1 pcs$10.69296
- 10 pcs$9.89007
- 100 pcs$8.44670
- Nimewo Pati:
- TPH3205WSB
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET N-CH 650V 36A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Transphorm TPH3205WSB electronic components. TPH3205WSB can be shipped within 24 hours after order. If you have any demands for TPH3205WSB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3205WSB Atribi pwodwi yo
Nimewo Pati :
TPH3205WSB
Manifakti :
Transphorm
Deskripsyon :
GANFET N-CH 650V 36A TO247
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 22A, 8V
Vgs (th) (Max) @ Id :
2.6V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Antre kapasite (Ciss) (Max) @ Vds :
2200pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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