[3358PC Stock]
- Nimewo Pati:
- PMV32UP/MIR
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- SMALL SIGNAL MOSFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMV32UP/MIR electronic components. PMV32UP/MIR can be shipped within 24 hours after order. If you have any demands for PMV32UP/MIR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV32UP/MIR Atribi pwodwi yo
Nimewo Pati :
PMV32UP/MIR
Manifakti :
Nexperia USA Inc.
Deskripsyon :
SMALL SIGNAL MOSFET
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
36 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.5nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1890pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
510mW (Ta), 4.15W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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