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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDB3682

ON Semiconductor - FDB3682

KEY Part #: K6399225

FDB3682 Pricing (USD) [106109PC Stock]

  • 1 pcs$0.34858
  • 800 pcs$0.33220
Nimewo Pati:
FDB3682
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 6A TO-263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB3682 electronic components. FDB3682 can be shipped within 24 hours after order. If you have any demands for FDB3682, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB3682 Atribi pwodwi yo

Nimewo Pati : FDB3682
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 6A TO-263AB
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta), 32A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 36 mOhm @ 32A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 95W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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