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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NCV8440ASTT1G

ON Semiconductor - NCV8440ASTT1G

KEY Part #: K6417277

NCV8440ASTT1G Pricing (USD) [188931PC Stock]

  • 1 pcs$0.19675
  • 1,000 pcs$0.19577
Nimewo Pati:
NCV8440ASTT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 59V 2.6A SOT-223-4. Gate Drivers 2.6A, 52V N-CH, CLAM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NCV8440ASTT1G electronic components. NCV8440ASTT1G can be shipped within 24 hours after order. If you have any demands for NCV8440ASTT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NCV8440ASTT1G Atribi pwodwi yo

Nimewo Pati : NCV8440ASTT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 59V 2.6A SOT-223-4
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 59V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 3.5V, 10V
RD sou (Max) @ Id, Vgs : 110 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id : 1.9V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 155pF @ 35V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.69W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA

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