DMT10H010LPS-13 Pricing (USD) [122154PC Stock]
- 1 pcs$0.30279
- 2,500 pcs$0.26799
- Nimewo Pati:
- DMT10H010LPS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 100V 9.4A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT10H010LPS-13 electronic components. DMT10H010LPS-13 can be shipped within 24 hours after order. If you have any demands for DMT10H010LPS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H010LPS-13 Atribi pwodwi yo
Nimewo Pati :
DMT10H010LPS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 100V 9.4A
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.4A (Ta), 98A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
71nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.2W (Ta), 139W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI5060-8
Pake / Ka :
8-PowerTDFN
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