[2749PC Stock]
- Nimewo Pati:
- IPP075N15N3GHKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 150V 100A TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP075N15N3GHKSA1 electronic components. IPP075N15N3GHKSA1 can be shipped within 24 hours after order. If you have any demands for IPP075N15N3GHKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP075N15N3GHKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP075N15N3GHKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 150V 100A TO220-3
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
8V, 10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Chaje Gate (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5470pF @ 75V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3
Pake / Ka :
TO-220-3
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