Infineon Technologies - BSC059N04LSGATMA1

KEY Part #: K6420734

BSC059N04LSGATMA1 Pricing (USD) [241388PC Stock]

  • 1 pcs$0.15323
  • 5,000 pcs$0.12334

Nimewo Pati:
BSC059N04LSGATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 73A TDSON-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC059N04LSGATMA1 Atribi pwodwi yo

Nimewo Pati : BSC059N04LSGATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 73A TDSON-8
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta), 73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2V @ 23µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3200pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 50W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN