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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMS4D0N12C

ON Semiconductor - FDMS4D0N12C

KEY Part #: K6397356

FDMS4D0N12C Pricing (USD) [29645PC Stock]

  • 1 pcs$1.39026
Nimewo Pati:
FDMS4D0N12C
Manifakti:
ON Semiconductor
Detaye deskripsyon:
PTNG 120V N-FET PQFN56.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS4D0N12C electronic components. FDMS4D0N12C can be shipped within 24 hours after order. If you have any demands for FDMS4D0N12C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS4D0N12C Atribi pwodwi yo

Nimewo Pati : FDMS4D0N12C
Manifakti : ON Semiconductor
Deskripsyon : PTNG 120V N-FET PQFN56
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 4 mOhm @ 67A, 10V
Vgs (th) (Max) @ Id : 4V @ 370A
Chaje Gate (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6460pF @ 60V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.7W (Ta), 106W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (5x6)
Pake / Ka : 8-PowerTDFN

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