IXFN70N120SK Pricing (USD) [911PC Stock]
- 1 pcs$50.99035
- Nimewo Pati:
- IXFN70N120SK
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN70N120SK electronic components. IXFN70N120SK can be shipped within 24 hours after order. If you have any demands for IXFN70N120SK, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN70N120SK Atribi pwodwi yo
Nimewo Pati :
IXFN70N120SK
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
68A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
34 mOhm @ 50A, 20V
Vgs (th) (Max) @ Id :
4V @ 15mA
Chaje Gate (Qg) (Max) @ Vgs :
161nC @ 20V
Vgs (Max) :
+20V, -5V
Antre kapasite (Ciss) (Max) @ Vds :
2790pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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