NTLJF3117PT1G Pricing (USD) [502748PC Stock]
- 1 pcs$0.07394
- 3,000 pcs$0.07357
- Nimewo Pati:
- NTLJF3117PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.3A 6-WDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTLJF3117PT1G electronic components. NTLJF3117PT1G can be shipped within 24 hours after order. If you have any demands for NTLJF3117PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTLJF3117PT1G Atribi pwodwi yo
Nimewo Pati :
NTLJF3117PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 2.3A 6-WDFN
Seri :
µCool™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
531pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
710mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WDFN (2x2)
Pake / Ka :
6-WDFN Exposed Pad
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