Nexperia USA Inc. - PSMN013-100YSEX

KEY Part #: K6419955

PSMN013-100YSEX Pricing (USD) [146989PC Stock]

  • 1 pcs$0.25163
  • 1,500 pcs$0.23532

Nimewo Pati:
PSMN013-100YSEX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN013-100YSEX electronic components. PSMN013-100YSEX can be shipped within 24 hours after order. If you have any demands for PSMN013-100YSEX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN013-100YSEX Atribi pwodwi yo

Nimewo Pati : PSMN013-100YSEX
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V LFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 82A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 13 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3775pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 238W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669

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