Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 30V 3A TSST8
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 4V Drive
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A
RD sou (Max) @ Id, Vgs :
71 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1A
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
8-TSST