STLD200N4F6AG Pricing (USD) [64546PC Stock]
- 1 pcs$0.60578
- 2,500 pcs$0.53706
- Nimewo Pati:
- STLD200N4F6AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 40V 120A POWERFLAT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STLD200N4F6AG electronic components. STLD200N4F6AG can be shipped within 24 hours after order. If you have any demands for STLD200N4F6AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STLD200N4F6AG Atribi pwodwi yo
Nimewo Pati :
STLD200N4F6AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 40V 120A POWERFLAT
Seri :
Automotive, AEC-Q101, STripFET™ F6
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6.5V, 10V
RD sou (Max) @ Id, Vgs :
1.5 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
172nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10700pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
158W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerFlat™ (5x6) Dual Side
Pake / Ka :
8-PowerWDFN
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