STMicroelectronics - STW27N60M2-EP

KEY Part #: K6398903

STW27N60M2-EP Pricing (USD) [15560PC Stock]

  • 1 pcs$2.64861
  • 10 pcs$2.36347
  • 100 pcs$1.93789
  • 500 pcs$1.56920
  • 1,000 pcs$1.32342

Nimewo Pati:
STW27N60M2-EP
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 600V 20A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - JFETs, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STW27N60M2-EP electronic components. STW27N60M2-EP can be shipped within 24 hours after order. If you have any demands for STW27N60M2-EP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STW27N60M2-EP Atribi pwodwi yo

Nimewo Pati : STW27N60M2-EP
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 600V 20A TO-220
Seri : MDmesh™ M2-EP
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 163 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4.75V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 1320pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 170W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247-3
Pake / Ka : TO-247-3

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