SI3590DV-T1-GE3 Pricing (USD) [239890PC Stock]
- 1 pcs$0.15419
- 3,000 pcs$0.14509
- Nimewo Pati:
- SI3590DV-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 2.5A 6-TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI3590DV-T1-GE3 electronic components. SI3590DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3590DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3590DV-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI3590DV-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 30V 2.5A 6-TSOP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A, 1.7A
RD sou (Max) @ Id, Vgs :
77 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
830mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP
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