IXYS - IXTH360N055T2

KEY Part #: K6394705

IXTH360N055T2 Pricing (USD) [13907PC Stock]

  • 1 pcs$3.27591
  • 90 pcs$3.25961

Nimewo Pati:
IXTH360N055T2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 55V 360A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXTH360N055T2 electronic components. IXTH360N055T2 can be shipped within 24 hours after order. If you have any demands for IXTH360N055T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH360N055T2 Atribi pwodwi yo

Nimewo Pati : IXTH360N055T2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 55V 360A TO-247
Seri : TrenchT2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 360A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 330nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 20000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 935W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3