Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2P-CH 12V 4A TSMT8
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.5V Drive
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
36 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1940pF @ 6V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
TSMT8