SIHD4N80E-GE3 Pricing (USD) [46760PC Stock]
- 1 pcs$0.83620
- Nimewo Pati:
- SIHD4N80E-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHAN 800V FP TO-252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIHD4N80E-GE3 electronic components. SIHD4N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD4N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD4N80E-GE3 Atribi pwodwi yo
Nimewo Pati :
SIHD4N80E-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 800V FP TO-252
Seri :
E
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.27 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
622pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
69W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-PAK (TO-252AA)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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