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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMB506P

ON Semiconductor - FDMB506P

KEY Part #: K6407958

[793PC Stock]

    Nimewo Pati:
    FDMB506P
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 20V 6.8A 8MICROFET.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDMB506P electronic components. FDMB506P can be shipped within 24 hours after order. If you have any demands for FDMB506P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDMB506P Atribi pwodwi yo

    Nimewo Pati : FDMB506P
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 20V 6.8A 8MICROFET
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
    RD sou (Max) @ Id, Vgs : 30 mOhm @ 6.8A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 4.5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 2960pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.9W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-MLP, MicroFET (3x1.9)
    Pake / Ka : 8-PowerWDFN

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