Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2P-CH 60V 0.34A SSOT6
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
340mA
RD sou (Max) @ Id, Vgs :
5 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
66pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
SuperSOT™-6