[665PC Stock]
- Nimewo Pati:
- IRF520NSTRRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 9.7A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF520NSTRRPBF electronic components. IRF520NSTRRPBF can be shipped within 24 hours after order. If you have any demands for IRF520NSTRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF520NSTRRPBF Atribi pwodwi yo
Nimewo Pati :
IRF520NSTRRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 9.7A D2PAK
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.8W (Ta), 48W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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