NMSD200B01-7 Pricing (USD) [895798PC Stock]
- 1 pcs$0.04129
- Nimewo Pati:
- NMSD200B01-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 60V 0.2A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated NMSD200B01-7 electronic components. NMSD200B01-7 can be shipped within 24 hours after order. If you have any demands for NMSD200B01-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NMSD200B01-7 Atribi pwodwi yo
Nimewo Pati :
NMSD200B01-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 60V 0.2A SOT363
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
50pF @ 25V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
200mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-363
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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