Vishay Siliconix - SUP70040E-GE3

KEY Part #: K6397992

SUP70040E-GE3 Pricing (USD) [27586PC Stock]

  • 1 pcs$1.49397
  • 10 pcs$1.33312
  • 100 pcs$1.03710
  • 500 pcs$0.83980
  • 1,000 pcs$0.70826

Nimewo Pati:
SUP70040E-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 120A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SUP70040E-GE3 electronic components. SUP70040E-GE3 can be shipped within 24 hours after order. If you have any demands for SUP70040E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUP70040E-GE3 Atribi pwodwi yo

Nimewo Pati : SUP70040E-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 120A TO220AB
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7.5V, 10V
RD sou (Max) @ Id, Vgs : 4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5100pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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