TK28N65W,S1F Pricing (USD) [16378PC Stock]
- 1 pcs$2.76760
- 30 pcs$2.22509
- 120 pcs$2.02729
- 510 pcs$1.64163
- 1,020 pcs$1.38450
- Nimewo Pati:
- TK28N65W,S1F
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 650V 27.6A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK28N65W,S1F electronic components. TK28N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK28N65W,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK28N65W,S1F Atribi pwodwi yo
Nimewo Pati :
TK28N65W,S1F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 650V 27.6A TO247
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
27.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1.6mA
Chaje Gate (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
230W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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