Nimewo Pati :
APTMC120AM12CT3AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1200V 220A SP3F
FET Kalite :
2 N Channel (Phase Leg)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
220A (Tc)
RD sou (Max) @ Id, Vgs :
12 mOhm @ 150A, 20V
Vgs (th) (Max) @ Id :
2.4V @ 30mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
483nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
8400pF @ 1000V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3