Nimewo Pati :
IPB160N04S2L03ATMA2
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH TO262-7
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Discontinued at Digi-Key
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
230nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
6000pF @ 15V
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-7-3
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)