[502PC Stock]
- Nimewo Pati:
- IXTF230N085T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 85V 130A ISOPLUS I4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in IXYS IXTF230N085T electronic components. IXTF230N085T can be shipped within 24 hours after order. If you have any demands for IXTF230N085T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTF230N085T Atribi pwodwi yo
Nimewo Pati :
IXTF230N085T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 85V 130A ISOPLUS I4
Seri :
TrenchMV™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
85V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 250mA
Chaje Gate (Qg) (Max) @ Vgs :
187nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS i4-PAC™
Pake / Ka :
i4-Pac™-5
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