Nimewo Pati :
VEC2616-TL-W-Z
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N/P-CH 60V 3A/2.5A VEC8
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 4V Drive
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2.5A
RD sou (Max) @ Id, Vgs :
80 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
505pF @ 20V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
SOT-28FL/VEC8