NTR2101PT1G Pricing (USD) [910893PC Stock]
- 1 pcs$0.04061
- 3,000 pcs$0.03884
- Nimewo Pati:
- NTR2101PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 8V 3.7A SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTR2101PT1G electronic components. NTR2101PT1G can be shipped within 24 hours after order. If you have any demands for NTR2101PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTR2101PT1G Atribi pwodwi yo
Nimewo Pati :
NTR2101PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 8V 3.7A SOT-23
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
52 mOhm @ 3.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1173pF @ 4V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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