Nimewo Pati :
APTM50HM75SCTG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 500V 46A SP4
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
46A
RD sou (Max) @ Id, Vgs :
90 mOhm @ 23A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
123nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
5590pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP4