[8335PC Stock]
- Nimewo Pati:
- STV250N55F3
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 55V 250A POWERSO-10.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STV250N55F3 electronic components. STV250N55F3 can be shipped within 24 hours after order. If you have any demands for STV250N55F3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STV250N55F3 Atribi pwodwi yo
Nimewo Pati :
STV250N55F3
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 55V 250A POWERSO-10
Seri :
STripFET™ III
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.2 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
10-PowerSO
Pake / Ka :
PowerSO-10 Exposed Bottom Pad
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