Infineon Technologies - AUIRF7737L2TR

KEY Part #: K6417968

AUIRF7737L2TR Pricing (USD) [47172PC Stock]

  • 1 pcs$0.82889
  • 4,000 pcs$0.76044

Nimewo Pati:
AUIRF7737L2TR
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 315A DIRECTFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF7737L2TR Atribi pwodwi yo

Nimewo Pati : AUIRF7737L2TR
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 315A DIRECTFET
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Ta), 156A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.9 mOhm @ 94A, 10V
Vgs (th) (Max) @ Id : 4V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 134nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5469pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.3W (Ta), 83W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DIRECTFET L6
Pake / Ka : DirectFET™ Isometric L6