IRF200B211 Pricing (USD) [80621PC Stock]
- 1 pcs$0.46409
- 10 pcs$0.41057
- 100 pcs$0.30699
- 500 pcs$0.23806
- 1,000 pcs$0.18794
- Nimewo Pati:
- IRF200B211
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 12A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - RF and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF200B211 electronic components. IRF200B211 can be shipped within 24 hours after order. If you have any demands for IRF200B211, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200B211 Atribi pwodwi yo
Nimewo Pati :
IRF200B211
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 12A TO-220AB
Seri :
HEXFET®, StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
170 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
790pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
80W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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