ON Semiconductor - NTD110N02RT4G

KEY Part #: K6392753

NTD110N02RT4G Pricing (USD) [184023PC Stock]

  • 1 pcs$0.20200
  • 2,500 pcs$0.20099

Nimewo Pati:
NTD110N02RT4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 24V 12.5A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTD110N02RT4G Atribi pwodwi yo

Nimewo Pati : NTD110N02RT4G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 24V 12.5A DPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 24V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 28nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3440pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta), 110W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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