Vishay Siliconix - SI9926CDY-T1-GE3

KEY Part #: K6525062

SI9926CDY-T1-GE3 Pricing (USD) [226109PC Stock]

  • 1 pcs$0.16358
  • 2,500 pcs$0.14319

Nimewo Pati:
SI9926CDY-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 20V 8A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Siliconix SI9926CDY-T1-GE3 electronic components. SI9926CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9926CDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI9926CDY-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI9926CDY-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 20V 8A 8-SOIC
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A
RD sou (Max) @ Id, Vgs : 18 mOhm @ 8.3A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 10V
Pouvwa - Max : 3.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO