SI3127DV-T1-GE3 Pricing (USD) [498195PC Stock]
- 1 pcs$0.07424
- 3,000 pcs$0.07013
- Nimewo Pati:
- SI3127DV-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CHAN 60V TSOP6S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Modil pouvwa chofè and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI3127DV-T1-GE3 electronic components. SI3127DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3127DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3127DV-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI3127DV-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CHAN 60V TSOP6S
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A (Ta), 13A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
89 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
833pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta), 4.2W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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