Vishay Siliconix - IRLZ14STRLPBF

KEY Part #: K6399231

IRLZ14STRLPBF Pricing (USD) [103532PC Stock]

  • 1 pcs$0.37767
  • 800 pcs$0.33871

Nimewo Pati:
IRLZ14STRLPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 60V 10A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - TRIACs, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Tiristors - SCR and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRLZ14STRLPBF electronic components. IRLZ14STRLPBF can be shipped within 24 hours after order. If you have any demands for IRLZ14STRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLZ14STRLPBF Atribi pwodwi yo

Nimewo Pati : IRLZ14STRLPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 10A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.4nC @ 5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 43W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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